Interface width dependence on sample temperature during Auger sputter depth profiling of Cr/Ni multilayered thin films
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[1] A. Zalar,et al. AES sputter depth profiling of Cr/Ni multilayers using Ar+, O2+ and N2+ ions , 1990 .
[2] A. Zalar,et al. AES depth profiling of a new type of multilayer structure composed of Cr/Ni layers of various thicknesses , 1989 .
[3] D. Márton,et al. Ion-induced radiation-enhanced diffusion of silver in nickel☆ , 1989 .
[4] A. Zalar. Auger electron spectroscopy depth profiling during sample rotation , 1986 .
[5] J. Fine,et al. An analytical expression for describing Auger sputter depth profile shapes of interfaces , 1986 .
[6] G. Gurp,et al. Measurement of thermomigration in thin metal films , 1985 .
[7] J. Fine,et al. Characterization of NBS Standard Reference Material 2135 for sputter depth profile analysis , 1985 .
[8] Michael E. Jones,et al. Roughness contributions to resolution in ion sputter depth profiles of polycrystalline metal films , 1984 .
[9] M. Seah. A review of the analysis of surfaces and thin films by AES and XPS , 1984 .
[10] J. Fine,et al. Ni/Cr interface width dependence on sputtered depth , 1983 .
[11] C. Hunt,et al. The depth dependence of the depth resolution in composition–depth profiling with Auger Electron Spectroscopy , 1983 .
[12] G. Carter,et al. Theoretical assessments of major physical processes involved in the depth resolution in sputter profiling , 1982 .
[13] S. Hofmann. Quantitative depth profiling in surface analysis: A review , 1980 .
[14] H. H. Andersen. The depth resolution of sputter profiling , 1979 .