Compact Super-Junction MOSFET model considering the specific potential distribution due to 2-fold resistance
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M. Miura-Mattausch | T. Inoue | H. Kikuchihara | H. J. Mattausch | M. Miyake | M. Kitamura | T. Umeda | A. Saito | F. Ueno
[1] Mitiko Miura-Mattausch,et al. Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices , 2011, IEEE Transactions on Electron Devices.
[2] Holger Kapels. Superjunction MOS devices — From device development towards system optimization , 2009, 2009 13th European Conference on Power Electronics and Applications.
[3] Mitiko Miura-Mattausch,et al. The Second-Generation of HiSIM_HV Compact Models for High-Voltage MOSFETs , 2013, IEEE Transactions on Electron Devices.
[4] I. Omura,et al. Role of Simulation Technology for the Progress in Power Devices and Their Applications , 2013, IEEE Transactions on Electron Devices.
[5] G. Deboy,et al. COOLMOS/sup TM/-a new milestone in high voltage power MOS , 1999, 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).
[6] Jih-Sheng Lai,et al. Modeling the inter-electrode capacitances of Si CoolMOS transistors for circuit simulation of high efficiency power systems , 2010, 2010 IEEE Energy Conversion Congress and Exposition.