Development of ultrasensitive extended-gate Ion-sensitive-field-effect-transistor based on industrial UTBB FDSOI transistor

The proof of concept of a new extended-gate pH sensor, developed on an industrial ultrathin body and buried oxide (UTBB) fully-depleted silicon-on-insulator (FDSOI) transistor, is reported. The strong electrostatic coupling between the front gate and back gate of UTBB FDSOI devices provide a signal amplification opportunity for sensing applications. On the other hand, the biasing capability through a capacitive divider circuit of a floating gate ISFET offers an ample advantage for fabrication of stable and CMOS compatible solid state chemical sensors. In addition, the deep downscaling of the state-of-the-art devices enables it to be sensitive at single-charge-resolution. By integrating aluminum oxide (Al2O3) for the pH sensing purpose, we obtained an extended-gate mode ISFET having a sensitivity of 475 mV/pH, which is superior to state-of-the-art low-power ISFETs.

[1]  Edwin C. Kan,et al.  Charge-based chemical sensors: a neuromorphic approach with chemoreceptive neuron MOS (C/spl nu/MOS) transistors , 2003 .

[2]  A. Errachid,et al.  ION-SENSITIVE FIELD-EFFECT TRANSISTORS FABRICATED IN A COMMERCIAL CMOS TECHNOLOGY , 1999 .

[3]  J. Hardcastle,et al.  Measurement of gastrointestinal pH profiles in normal ambulant human subjects. , 1988, Gut.

[4]  J. V. Spiegel,et al.  The extended gate chemically sensitive field effect transistor as multi-species microprobe☆ , 1983 .

[5]  M. Esashi,et al.  ISFET's using inorganic gate thin films , 1979, IEEE Transactions on Electron Devices.

[6]  R. Kelly.  Microelectronic approaches to solid state ion selective electrodes , 1977 .

[7]  D. E. Yates,et al.  Site-binding model of the electrical double layer at the oxide/water interface , 1974 .

[8]  A. Ivaska,et al.  Surface Functionalization of Ion-Sensitive Floating-Gate Field-Effect Transistors With Organic Electronics , 2015, IEEE Transactions on Electron Devices.

[9]  Bernard P. Puc,et al.  An integrated semiconductor device enabling non-optical genome sequencing , 2011, Nature.

[10]  Stephane Monfray,et al.  UTBB FDSOI: Evolution and opportunities , 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

[11]  D. M. Leeuw,et al.  Beyond the Nernst-limit with dual-gate ZnO ion-sensitive field-effect transistors , 2011 .

[12]  J. Meindl,et al.  A process for the combined fabrication of ion sensors and CMOS circuits , 1988, IEEE Electron Device Letters.

[13]  P Bergveld,et al.  Development of an ion-sensitive solid-state device for neurophysiological measurements. , 1970, IEEE transactions on bio-medical engineering.

[14]  Sharmila Baliga,et al.  Salivary pH: A diagnostic biomarker , 2013, Journal of Indian Society of Periodontology.

[15]  W. Cho,et al.  Performance Enhancement of Capacitive-Coupling Dual-gate Ion-Sensitive Field-Effect Transistor in Ultra-Thin-Body , 2014, Scientific Reports.

[16]  C.K. Yang,et al.  High performance dual-gate ISFET with non-ideal effect reduction schemes in a SOI-CMOS bioelectrical SoC , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

[17]  L. Hermansen,et al.  Blood and muscle pH after maximal exercise in man. , 1972, Journal of applied physiology.