论文信息 - High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy - 字舞流文

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

D. Jena | H. Xing | P. Fay | Yuning Zhao | V. Protasenko | Xiaodong Yan | M. Qi | J. Verma | K. Nomoto | Zongyang Hu | M. Zhu | B. Song | S. Bader | Guowang Li