Modeling of novel hybrid photonic crystal structures involving cured hydrogen silsesquioxane pillars for improving the light extraction in light-emitting diodes

The Solid-State Lighting (SSL) industry utilizes semiconductor based light-emitting diodes (LEDs) as core elements of light sources. LED lighting has several advantages over conventional incandescent bulbs; however, device-level issues such as material quality, low quantum efficiencies, and low light extraction efficiencies still exist. Many techniques have been explored to provide improvement in the area of LED light extraction. Improvement in light extraction efficiency, through the use of integrated optical components such as photonic crystals, is critical for the improvement in the overall efficiency of the device. Fabrication and integration of PhCs into LEDs with little or no degradation in device’s electrical characteristics is an important accomplishment to be considered. Use of electron beam lithography and novel electron beam resists like hydrogen silsesquioxane will allow advancements toward achieving this goal. The unique chemical properties of HSQ allows transformation of the patterned resist into silicon dioxide. This leads to hybrid PhC structures that contain the cured form of HSQ and other materials of interest in an LED. In this work, novel hybrid PhC structures in square and triangular lattice configurations will be modeled to improve light extraction in blue InGaN/GaN based LEDs (λ=465 nm) and attain an optimal structure. Feature sizes from 100 nm to 465 nm will be modeled and the effect of the patterned structure (band gap and/or diffraction) on the light extraction will be studied and analyzed. Simulation data from frequency domain and time domain engines in MPB and OptiFDTD respectively will be analyzed and presented.

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