Atomic scale structure of microtwins in single crystal Si grown by lateral solid phase epitaxy

Structural study of microtwins in single‐crystal Si grown by lateral solid phase epitaxy has been done using high‐resolution cross‐sectional transmission electron microscopy. Microtwins with a few {111} atomic planes grow from the Si/SiO2 interface and extend to 20–30 nm in length. Using multibeam interference technique near the Scherzer focus, a structure image of a microtwin with a thickness of four {111} atomic planes was obtained. Lattice fringes of the matrix on both sides of the microtwin are shifted each other by one third of the {111} planar distance. From the analysis of a structural model of the microtwins, the growth mechanism of microtwins and the appearance of moire fringes are discussed. Consequently, the fact that the microtwins which originate from the Si/SiO2 interface are localized near the interface is shown clearly.