论文信息 - Investigations on the Short-Circuit Degradation and its Mechanism of 1.2-KV 19-A SiC power MOSFETs - 字舞流文

Investigations on the Short-Circuit Degradation and its Mechanism of 1.2-KV 19-A SiC power MOSFETs

Y. En | X. B. Xu | Y. Chen | Z. He | Y. Huang | J. L. Wang | K. Geng | Z. He