Single Stripe High Power Laser Diodes Made By Metal-Organic Chemical Vapor Deposition

Single stripe broad area GaAs/A1GaAs laser diodes were fabricated by Metal-Organic Chemical Vapor Deposition (MOCVD) epitaxial growth method. A CW output power of more than 1 watt was obtained with a single-lobed transverse-mode operation. The power conversion efficiency of the laser was as high as 33% with relatively low operating current. Both the transverse and longitudinal modes show basically single-lobed envelopes with fine components. The characteristics of these lasers can be explained by the mixed state of the fundamental and higher-order modes.