Breakdown of high-performance monolayer MoS2 transistors.

Two-dimensional (2D) materials such as monolayer molybdenum disulfide (MoS(2)) are extremely interesting for integration in nanoelectronic devices where they represent the ultimate limit of miniaturization in the vertical direction. Thanks to the presence of a band gap and subnanometer thickness, monolayer MoS(2) can be used for the fabrication of transistors exhibiting extremely high on/off ratios and very low power dissipation. Here, we report on the development of 2D MoS(2) transistors with improved performance due to enhanced electrostatic control. Our devices show currents in the 100 μA/μm range and transconductance exceeding 20 μS/μm as well as current saturation. We also record electrical breakdown of our devices and find that MoS(2) can support very high current densities, exceeding the current-carrying capacity of copper by a factor of 50. Our results push the performance limit of MoS(2) and open the way to their use in low-power and low-cost analog and radio frequency circuits.

[1]  B. Radisavljevic,et al.  Small-signal amplifier based on single-layer MoS2 , 2012, 1208.5202.

[2]  Keliang He,et al.  Control of valley polarization in monolayer MoS2 by optical helicity. , 2012, Nature nanotechnology.

[3]  Can Ataca,et al.  Stable, Single-Layer MX2 Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure , 2012 .

[4]  Yu‐Chuan Lin,et al.  Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates. , 2012, Nano letters.

[5]  Guanxiong Liu,et al.  Graphene-on-diamond devices with increased current-carrying capacity: carbon sp2-on-sp3 technology. , 2012, Nano letters.

[6]  Wang Yao,et al.  Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides. , 2011, Physical review letters.

[7]  P. Ajayan,et al.  Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate , 2011, 1111.5072.

[8]  Andras Kis,et al.  Stretching and breaking of ultrathin MoS2. , 2011, ACS nano.

[9]  Branimir Radisavljevic,et al.  Integrated circuits and logic operations based on single-layer MoS2. , 2011, ACS nano.

[10]  Youngki Yoon,et al.  How good can monolayer MoS₂ transistors be? , 2011, Nano letters.

[11]  Jing Guo,et al.  Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors , 2011, IEEE Transactions on Electron Devices.

[12]  X. Duan,et al.  Top-gated chemical vapor deposition grown graphene transistors with current saturation. , 2011, Nano letters.

[13]  Thomas Heine,et al.  Influence of quantum confinement on the electronic structure of the transition metal sulfide T S 2 , 2011, 1104.3670.

[14]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[15]  J. Coleman,et al.  Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials , 2011, Science.

[16]  B. Radisavljevic,et al.  Visibility of dichalcogenide nanolayers , 2010, Nanotechnology.

[17]  J. Shan,et al.  Atomically thin MoS₂: a new direct-gap semiconductor. , 2010, Physical review letters.

[18]  A. Splendiani,et al.  Emerging photoluminescence in monolayer MoS2. , 2010, Nano letters.

[19]  C. Dimitrakopoulos,et al.  100-GHz Transistors from Wafer-Scale Epitaxial Graphene , 2010, Science.

[20]  S. Lebègue,et al.  Electronic structure of two-dimensional crystals from ab-initio theory , 2009, 0901.0440.

[21]  K. Shepard,et al.  Current saturation in zero-bandgap, top-gated graphene field-effect transistors. , 2008, Nature nanotechnology.

[22]  A. Bachtold,et al.  Current-induced cleaning of graphene , 2007, 0709.0607.

[23]  E. Williams,et al.  Atomic structure of graphene on SiO2. , 2007, Nano letters.

[24]  D. Jena,et al.  Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering. , 2007, Physical review letters.

[25]  P. Kim,et al.  Experimental observation of the quantum Hall effect and Berry's phase in graphene , 2005, Nature.

[26]  A. Geim,et al.  Two-dimensional gas of massless Dirac fermions in graphene , 2005, Nature.

[27]  K. Novoselov,et al.  Two-dimensional atomic crystals. , 2005, Proceedings of the National Academy of Sciences of the United States of America.

[28]  Andre K. Geim,et al.  Electric Field Effect in Atomically Thin Carbon Films , 2004, Science.

[29]  Dekker,et al.  High-field electrical transport in single-wall carbon nanotubes , 1999, Physical review letters.

[30]  S. Morrison,et al.  Single-layer MoS2 , 1986 .

[31]  B. Parkinson,et al.  Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides , 1982 .

[32]  Paul Horowitz,et al.  The Art of Electronics , 1980 .

[33]  R. Frindt,et al.  Single Crystals of MoS2 Several Molecular Layers Thick , 1966 .

[34]  F. Schwierz.  Graphene transistors. , 2010, Nature nanotechnology.

[35]  John Robertson,et al.  Growth of nanotubes for electronics , 2007 .

[36]  A. Christou.  Electromigration and electronic device degradation , 1994 .