142 GHz amplifier with 18.5 dB gain and 7.9 mw DC power in 65 nm CMOS

A single-ended amplifier with a magnetic-coupled feedback embedded network is proposed and its small-signal equivalent circuit is analysed in detail. The embedded network cancels the effects of the gate–drain capacitor C gd and introduces negative resistance into the transistor drain, so that the maximum power gain of the transistor could be achieved. Based on this design methodology, a 142 GHz amplifier with 18.5 dB power gain and 7.9 mW DC power has been implemented in 65 nm CMOS.

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