The Effect of Oxygen on Diffusion and Compounding at Ni-GaAs(100) Interfaces
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[1] M. Eizenberg,et al. Interfacial reactions of Ni‐Ta thin films on GaAs , 1984 .
[2] D. Lichtman,et al. Calculated Auger sensitivity factors compared to experimental handbook values , 1983 .
[3] A. Y. Cho,et al. Growth of III–V semiconductors by molecular beam epitaxy and their properties , 1983 .
[4] M. Nathan,et al. Characteristics of AuGeNi ohmic contacts to GaAs , 1982 .
[5] M. Ogawa. Alloying reaction in thin nickel films deposited on GaAs , 1980 .
[6] Edmund R. Malinowski,et al. Factor Analysis in Chemistry , 1980 .
[7] M. Nicolet,et al. Investigation of the AuGeNi system used for alloyed contacts to GaAs , 1977 .
[8] G. Y. Robinson,et al. Metallurgical and electrical properties of alloyed Ni/AuGe films on n-type GaAs , 1975 .
[9] N. Braslau,et al. Metal-semiconductor contacts for GaAs bulk effect devices , 1967 .
[10] W. Spicer,et al. Chemical Reaction at the Ni/Inp (110) and Ni/GaAs (110) Interfaces * , 1983 .
[11] S. Gaarenstroom. Principal component analysis of Auger line shapes at solid—solid interfaces , 1981 .
[12] M. Ogawa. Alloying behavior of Ni/Au‐Ge films on GaAs , 1980 .
[13] P. Hall,et al. A formalism for extracting diffusion coefficients from concentration profiles , 1976 .