论文信息 - Donor-acceptor pair recombination in GaN

Donor-acceptor pair recombination in GaN

Abstract Photoluminescence arising from distant donor-acceptor pair recombination in GaN has been identified and analyzed. Impurity binding energies of E D = 42 ± 1 meV and E A ∼ 200 meV are proposed. The recombination rate constant, W ( O ) = (3 ± 2) x 10 7 sec − is consistent with a direct, fundamental energy gap in GaN.

Marc Ilegems | R. Dingle | M. Ilegems | R. Dingle

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