论文信息 - Partial arsenic pressure and crystal orientation during the molecular beam epitaxy of GaAs on SrTiO3(001) - 字舞流文

Partial arsenic pressure and crystal orientation during the molecular beam epitaxy of GaAs on SrTiO3(001)

J. Penuelas | P. Regreny | G. Saint-Girons | J. Cheng | A. Chettaoui | B. Gobaut | G. Hollinger | Y. Robach | A. Benamrouche