A 700-V class reverse-blocking IGBT for large capacity power supply applications

A 700-V class Reverse-Blocking IGBT (RB-IGBT) is developed for large capacity power supply applications inevitably accompanied with increasing parasitic inductance and high current slew rate relative to their medium capacity counterparts. Compared with 600-V RB-IGBT, the device allows high dynamic surge voltage and fast switching to reduce turn-off loss by 35% under an advanced T-type-NPC three level power module benchmark condition and by 17% from a loss analysis of a realistic three level rectifier stage in a generic power converter application. Furthermore, reduction of reverse-blocking leakage current to one-tenth also enables 25°C higher operation junction temperature. A side effect of the developed device as a first step is a 0.15V increase in on-state voltage, making it gain no loss reduction in a three level inverter stage. Therefore, its reduction should be addressed in further work.