Measurement of the interface trap and dielectric charge density in high-/spl kappa/ gate stacks

We demonstrate an accurate measurement of the interface trap density and the stress-induced dielectric charge density in Si/high-/spl kappa/ gate dielectric stacks of metal-oxide-semiconductor field-effect transistors (MOSFETs) using the direct-current current-voltage (DCIV) technique. The capture cross section and density of the interface traps in the high-/spl kappa/ gate stack were found to be similar to those of the Si/SiO/sub 2/ interface. A constant-voltage stress of the p-channel MOSFET in inversion is shown to result in a negative dielectric charging and an increase in the interface trap density.

[1]  E. H. Nicollian,et al.  The si-sio, interface – electrical properties as determined by the metal-insulator-silicon conductance technique , 1967 .

[2]  G. Bersuker,et al.  Trapped charge induced gate oxide breakdown , 2004 .

[3]  Temperature dependence of surface recombination current in MOS transistors , 2001 .

[4]  J. Stathis,et al.  Ultimate limit for defect generation in ultra-thin silicon dioxide , 1997 .

[5]  Method for determination of carrier capture cross-sections at Si/SiO/sub 2/ interface , 2004 .

[6]  C. Sah,et al.  Thin oxide thickness extrapolation from capacitance-voltage measurements , 1997 .

[7]  Y. Ono,et al.  Reliability concerns for HfO/sub 2//Si (and (ZrO/sub 2//Si) systems: interface and dielectric traps , 2003, IEEE International Integrated Reliability Workshop Final Report, 2003.

[8]  R. Bergmann,et al.  Integration of high-k gate stack systems into planar CMOS process flows , 2001, Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537).

[9]  J. Kavalieros,et al.  Direct-current measurements of oxide and interface traps on oxidized silicon , 1995 .

[10]  J. Brini,et al.  On the tunneling component of charge pumping current in ultrathin gate oxide MOSFETs , 1999, IEEE Electron Device Letters.

[11]  J. Cai,et al.  Interfacial electronic traps in surface controlled transistors , 2000 .

[12]  C. Sah.  Fundamentals of Solid State Electronics , 1991 .

[13]  K. Ahmed,et al.  Characterization of ultra-thin oxides using electrical C-V and I-V measurements , 1998 .

[14]  G. Groeseneken,et al.  A reliable approach to charge-pumping measurements in MOS transistors , 1984, IEEE Transactions on Electron Devices.

[15]  B. H. Lee,et al.  Interfacial Layer-Induced Mobility Degradation in High-k Transistors , 2004 .