论文信息 - Ni silicide morphology on small features - 字舞流文

Ni silicide morphology on small features

Karen Maex | Jorge Kittl | Muriel de Potter de ten Broeck | Christa Vrancken | J. Kittl | A. Lauwers | R. Lindsay | K. Maex | C. Vrancken | M. V. Dal | O. Chamirian | Richard Lindsay | Anne Lauwers | Mark Van Dal | O. Chamirian | M. D. P. D. T. Broeck

[1] H. Bender,et al. Materials aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 μm technologies , 2001 .

[2] Karen Maex,et al. In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines , 2001 .

[3] J. Woo,et al. Salicidation process using NiSi and its device application , 1997 .

[4] Hiroshi Iwai,et al. Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI , 1995 .

[5] Lun-Lun Chen,et al. Interfacial reactions of nickel thin films on BF+2‐implanted (001)Si , 1991 .

[6] Lun-Lun Chen,et al. Epitaxial growth of NiSi2 on ion‐implanted silicon at 250–280 °C , 1986 .

[7] S. P. Murarka,et al. Refractory silicides for integrated circuits , 1980 .