Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

which results in macro steps � 10 nm in height. In this report, we study the qualitative and quantitative effects of SiC steps edges on the resistance of epitaxial graphene grown by chemical vapor deposition. We experimentally determine the value of step edge resistivity in hydrogen-intercalated QFS-bilayer graphene to be � 190Xlm for step height hS ¼ 10 nm and provide proof that it cannot originate from mechanical deformation of graphene but is likely to arise from lowered carrier concentration in the step area. Our results are confronted with the previously reported values of the step edge resistivity in monolayer graphene over SiC atomic steps. In our analysis, we focus on large-scale, statistical properties to foster the scalable technology of industrial graphene for electronics and sensor applications. V C 2014 AIP Publishing LLC .[ http://dx.doi.org/10.1063/1.4896581]

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