论文信息 - Two-stage quasi-class-E power amplifier in GaN HEMT technology

Two-stage quasi-class-E power amplifier in GaN HEMT technology

This letter presents a two-stage quasi-class-E monolithic microwave integrated circuit power amplifier at 2.0GHz, which is based on field-plated GaN high electron mobility transistor technology. It consists of a driver stage and a power stage. The circuit schematic is described. The amplifier achieves an output power of 37.5dBm into a 50-Omega load, a power added efficiency (PAE) of 50%, and a gain of 18.2dB. A power density of 5.6W/mm is achieved

[1] M. Kumar,et al. A 900-MHz fully integrated SOI power amplifier for single-chip wireless transceiver applications , 2000, IEEE Journal of Solid-State Circuits.

[2] Frederick H. Raab,et al. Idealized operation of the class E tuned power amplifier , 1977 .

[3] A. Gutierrez-Aitken,et al. Ultrahigh-efficiency power amplifier for space radar applications , 2002 .

[4] Michiel Steyaert,et al. A 700-MHz 1-W fully differential CMOS class-E power amplifier , 2002 .

[5] C.A.T. Salama,et al. Low voltage, high efficiency GaAs Class E power amplifiers for wireless transmitters , 1995 .

[6] P. Gardner,et al. Integrated antenna/power combiner for LINC radio transmitters , 2005, IEEE Transactions on Microwave Theory and Techniques.

[7] U. Mishra,et al. 30-W/mm GaN HEMTs by field plate optimization , 2004, IEEE Electron Device Letters.