论文信息 - A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET

A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET

Although both exact (Taul et al.,2004) and design oriented approximate (Sallese et al., 2005) closed-form analytical solution of the drain current for the symmetric double gate (DG) MOST exist, a closed-form expression for asymmetric DG MOST is still lacking. This work presents an analytic closed-form charge-based expression for the drain current for asymmetric DG MOST. The expression presented in this work is valid from weak to strong inversion and retains the asymptotic behavior.

[1] F. Balestra,et al. Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance , 1987, IEEE Electron Device Letters.

[2] Denis Flandre,et al. A gm/ID based methodology for the design of CMOS analog circuits and its application to the synthesis of a silicon-on-insulator micropower OTA , 1996, IEEE J. Solid State Circuits.

[3] Y. Taur,et al. A continuous, analytic drain-current model for DG MOSFETs , 2004 .

[4] Yuan Taur,et al. Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs , 2001 .

[5] Keunwoo Kim,et al. Double-gate CMOS: symmetrical- versus asymmetrical-gate devices , 2001 .

[6] Christian Enz,et al. A Design Oriented Charge-based Current Model for Symmetric DG MOSFET and its Correlation with the EKV Formalism , 2005 .