High-temperature general purpose operational amplifier in IBM 0.13 µm CMOS process

We present a high-temperature general purpose operational amplifier that can operate at an ambient temperature of 200°C. The amplifier is implemented in IBM CMOS 0.13μm process with 2.5V power supply. A constant-gm biasing technique is used to stabilize the gain and bandwidth variation the over wide temperature range. From 25°C to 200°C, the measured DC gain variation is 5.2dB. At 200°C, the amplifier has DC gain of 57.4dB driving 2pF capacitance load and consumes 0.56mW of average power.

[1]  Bob Hunt,et al.  High temperature electronics for harsh environments , 2011, 18th European Microelectronics & Packaging Conference.

[2]  A.H.M. van Roermund,et al.  A 300°C Dynamic-Feedback Instrumentation Amplifier , 1998 .

[3]  Xinyu Yu.  High-temperature Bulk CMOS Integrated Circuits for Data Acquisition , 2006 .

[4]  Shahriar Mirabbasi,et al.  A 2.5 V 0.13 μm CMOS amplifier for a high-temperature sensor system , 2009, 2009 Joint IEEE North-East Workshop on Circuits and Systems and TAISA Conference.

[5]  Vamsy P. Chodavarapu,et al.  Design of CMOS capacitance to frequency converter for high-temperature MEMS sensors , 2013, 2013 IEEE SENSORS.

[6]  P. de Jong,et al.  A 300/spl deg/C dynamic-feedback instrumentation amplifier , 1998, 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156).