Microscopy and spectroscopy of buried nanostructures
暂无分享,去创建一个
[1] Gerd Karl Binnig,et al. Scanning Tunneling Microscopy , 1996 .
[2] M. Lagally,et al. EMBEDDING OF NANOSCALE 3D SIGE ISLANDS IN A SI MATRIX , 1998 .
[3] K. Heinz,et al. Ballistic Electron Emission Microscopy on CoSi 2 / Si ( 111 ) Interfaces: Band Structure Induced Atomic-Scale Resolution and Role of Localized Surface States , 1998, cond-mat/9810229.
[4] U. Pietsch,et al. COPLANAR AND GRAZING INCIDENCE X-RAY-DIFFRACTION INVESTIGATION OF SELF-ORGANIZED SIGE QUANTUM DOT MULTILAYERS , 1998 .
[5] J. Werckmann,et al. Si adatom surface migration biasing by elastic strain gradients during capping of Ge or Si1−xGex hut islands , 1998 .
[6] J. Werckmann,et al. Surface smoothing induced by epitaxial Si capping of rough and strained Ge or Si1−xGex morphologies: a RHEED and TEM study , 1998 .
[7] Williams,et al. Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes , 1998, Science.
[8] H. Känel,et al. Study of Interfacial Point Defects by Ballistic Electron Emission Microscopy , 1997 .
[9] V. Narayanamurti,et al. Local conduction band offset of GaSb self-assembled quantum dots on GaAs , 1997 .
[10] O'Shea,et al. Imaging and Spectroscopy of Single InAs Self-Assembled Quantum Dots using Ballistic Electron Emission Microscopy. , 1996, Physical review letters.
[11] S. Yalisove,et al. CoSi2 heteroepitaxy on patterned Si(100) substrates , 1996 .
[12] Lee,et al. Spatial variations of hot-carrier transmission across CoSi2/Si interfaces on a nanometer scale. , 1996, Physical Review B (Condensed Matter).
[13] Flores,et al. Elastic scattering and the lateral resolution of ballistic electron emission microscopy: Focusing effects on the Au/Si interface. , 1996, Physical review letters.
[14] H. Sirringhaus,et al. Epitaxial metal silicides: interface mapping by scanning probe techniques , 1995 .
[15] H. Sirringhaus,et al. In situ ballistic‐carrier spectroscopy on epitaxial CoSi2/Si(111) and Si(100) , 1995 .
[16] Lee,et al. Atomic-Scale Variations of the Tunneling Distribution in a Scanning Tunneling Microscope Observed by Ballistic-Electron-Emission Microscopy. , 1995, Physical review letters.
[17] Lee,et al. Hot carrier scattering at interfacial dislocations observed by ballistic-electron-emission microscopy. , 1994, Physical review letters.
[18] H. Sirringhaus,et al. In situ study of epitaxial CoSi2/Si(111) by ballistic‐electron‐emission microscopy , 1994 .
[19] C. Bulle-lieuwma. Epitaxial growth of CoSi2/Si structures , 1993 .
[20] Northrup. Electronic structure of Si(100)c(4 x 2) calculated within the GW approximation. , 1993, Physical review. B, Condensed matter.
[21] Tung,et al. Electron transport at metal-semiconductor interfaces: General theory. , 1992, Physical review. B, Condensed matter.
[22] H. Sirringhaus,et al. Surface study of thin epitaxial CoSi2/Si(100) layers by scanning tunneling microscopy and reflection high-energy electron diffraction , 1992 .
[23] H. Sirringhaus,et al. Observation of misfit dislocations in epitaxial CoSi2/Si (111) layers by scanning tunneling microscopy , 1991 .
[24] Lee,et al. Ballistic-carrier spectroscopy of the CoSi2/Si interface. , 1991, Physical review. B, Condensed matter.
[25] D. Hamann,et al. Kinematic theory of ballistic electron emission spectroscopy of silicon–silicide interfaces , 1991 .
[26] Webb,et al. Growth and equilibrium structures in the epitaxy of Si on Si(001). , 1989, Physical review letters.
[27] S. M. Hu,et al. Stress from a parallelepipedic thermal inclusion in a semispace , 1989 .
[28] Gibson,et al. Evidence for a dimer reconstruction at a metal-silicon interface. , 1989, Physical review letters.
[29] Bell,et al. Observation of interface band structure by ballistic-electron-emission microscopy. , 1988, Physical review letters.
[30] Hamann,et al. Electronic structure and properties of CoSi2. , 1988, Physical review. B, Condensed matter.
[31] Bell,et al. Direct investigation of subsurface interface electronic structure by ballistic-electron-emission microscopy. , 1988, Physical review letters.
[32] Stroscio,et al. Electronic structure of the Si(111)2 x 1 surface by scanning-tunneling microscopy. , 1986, Physical review letters.
[33] Martin,et al. Theoretical calculations of heterojunction discontinuities in the Si/Ge system. , 1986, Physical review. B, Condensed matter.
[34] J. Poate,et al. The Effects of Nucleation and Growth on Epitaxy in the CoSi2/Si System , 1982 .