Enhanced Radiation-Induced Narrow Channel Effects in Commercial 0 . 18 m Bulk Technology

Total ionizing dose effects are investigated in input/output transistors that are fabricated by using a commercial 0.18 m bulk process. An enhanced radiation-induced narrow channel effect is demonstrated in N-type metal–oxide semiconductor (NMOS) and P-type metal–oxide semiconductor (PMOS) transistors, leading to a significant threshold voltage shift which may compromise circuit operations. Calculations using a code dedicated to radiation-induced charge trapping in oxides show that the radiation-induced positive charge trapping in trench oxides leads to the modifications of the electrical characteristics experimentally evidenced. Radiation hardening issues are finally discussed as a function of the device geometry and design.

[1]  P. Dressendorfer,et al.  Effect of bias on radiation‐induced paramagnetic defects at the silicon‐silicon dioxide interface , 1982 .

[2]  O. Faynot,et al.  Total ionizing dose effects on deca-nanometer fully depleted SOI devices , 2005, IEEE Transactions on Nuclear Science.

[3]  P. S. Winokur,et al.  Dependence of Interface-State Buildup on Hole Generation and Transport in Irradiated MOS Capacitors , 1976, IEEE Transactions on Nuclear Science.

[4]  H. E. Boesch,et al.  Total Dose Indujced Hole Trapping and Interface State Generation in Bipolar Recessed Field Oxides , 1985, IEEE Transactions on Nuclear Science.

[5]  D. Fleetwood,et al.  Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices , 1993 .

[6]  P. Winokur,et al.  Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors , 1986 .

[7]  P. Magnan,et al.  Overview of Ionizing Radiation Effects in Image Sensors Fabricated in a Deep-Submicrometer CMOS Imaging Technology , 2009, IEEE Transactions on Electron Devices.

[8]  H. Shah,et al.  Enhanced TID Susceptibility in Sub-100 nm Bulk CMOS I/O Transistors and Circuits , 2007, IEEE Transactions on Nuclear Science.

[9]  Daniel M. Fleetwood,et al.  Estimating oxide‐trap, interface‐trap, and border‐trap charge densities in metal‐oxide‐semiconductor transistors , 1994 .

[10]  P. S. Winokur,et al.  Field- and Time-Dependent Radiation Effects at the SiO2/Si Interface of Hardened MOS Capacitors , 1977, IEEE Transactions on Nuclear Science.

[11]  Sorin Cristoloveanu,et al.  High tolerance to total ionizing dose of Ω-shaped gate field-effect transistors , 2006 .

[12]  H. E. Boesch.  Interface-State Generation in Thick SiO2 Layers , 1982, IEEE Transactions on Nuclear Science.

[13]  O. Faynot,et al.  Total Ionizing Dose Effects on Triple-Gate FETs , 2006, IEEE Transactions on Nuclear Science.

[14]  R. Koga,et al.  Application of hardness-by-design methodology to radiation-tolerant ASIC technologies , 2000 .

[15]  Daniel M. Fleetwood,et al.  Radiation‐induced charge neutralization and interface‐trap buildup in metal‐oxide‐semiconductor devices , 1990 .

[16]  Hugh J. Barnaby,et al.  Modeling Ionizing Radiation Effects in Solid State Materials and CMOS Devices , 2008, IEEE Transactions on Circuits and Systems I: Regular Papers.

[17]  A Visconti,et al.  TID sensitivity of NAND Flash memory building blocks , 2008, 2008 European Conference on Radiation and Its Effects on Components and Systems.

[18]  Daniel M. Fleetwood,et al.  Effects of irradiation temperature on MOS radiation response , 1997 .

[19]  G. Cervelli,et al.  Radiation-induced edge effects in deep submicron CMOS transistors , 2005, IEEE Transactions on Nuclear Science.

[20]  A. Johnston,et al.  Low Dose Rate Effects in Shallow Trench Isolation Regions , 2010, IEEE Transactions on Nuclear Science.

[21]  En Xia Zhang,et al.  Fin-Width Dependence of Ionizing Radiation-Induced Subthreshold-Swing Degradation in 100-nm-Gate-Length FinFETs , 2009, IEEE Transactions on Nuclear Science.

[22]  C. Dozier,et al.  Effect of bias on the response of metal‐oxide‐semiconductor devices to low‐energy x‐ray and cobalt‐60 irradiation , 1988 .

[23]  J. V. Osborn,et al.  Total-dose tolerance of a chartered semiconductor 0.35-/spl mu/m CMOS process , 1999, 1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463).

[24]  J. Benedetto,et al.  Saturation of Threshold Voltage Shift in MOSFET's at High Total Dose , 1986, IEEE Transactions on Nuclear Science.

[25]  peixiong zhao,et al.  Total Dose Effects on the Performance of Irradiated Capacitorless MSDRAM Cells , 2010, IEEE Transactions on Nuclear Science.

[26]  H.J. Barnaby,et al.  Total-Ionizing-Dose Effects in Modern CMOS Technologies , 2006, IEEE Transactions on Nuclear Science.

[27]  P. S. Winokur,et al.  Radiation-Induced Interface-State Generation in MOS Devices , 1986, IEEE Transactions on Nuclear Science.

[28]  H. E. Boesch,et al.  Charge and Interface State Generation in Field Oxides , 1984, IEEE Transactions on Nuclear Science.

[29]  Daniel M. Fleetwood,et al.  Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices , 1990 .

[30]  A. Visconti,et al.  Error Instability in Floating Gate Flash Memories Exposed to TID , 2009, IEEE Transactions on Nuclear Science.

[31]  M. Turowski,et al.  Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides , 2004, IEEE Transactions on Nuclear Science.