Low temperature, solution-processed ambipolar field-effect transistors based on polymer/self-assembled monolayer modified InOx hybrid structures for balanced hole and electron mobilities exceeding 1 cm2 V−1 s−1
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L. Lan | P. Xiao | Junbiao Peng | Yong Cao | Junwu Chen | Yuzhi Li | Sheng Sun | Zhenguo Lin | Zhenhui Chen | Junwu Chen