A novel bipolar imaging device with self-noise-reduction capability

A bipolar image sensor with charge amplification and noise-reduction capabilities in each unit cell is discussed. The dynamic range of linearity in the photoelectric conversion characteristics has been greatly extended by using capacitor-loaded emitter-follower circuitry and a readout operation in a deep forward-base-emitter-biasing condition. The fixed pattern noise and the random noise are reduced by introducing a hybrid reset operation that is a combination of the clamp reset and the transient reset. >

[1]  G. Strull,et al.  A monolithic mosaic of photon sensors for solid-state imaging applications , 1966 .

[2]  G. E. Smith,et al.  Charge coupled semiconductor devices , 1970, Bell Syst. Tech. J..

[3]  N. Koike,et al.  MOS area sensor: Part I—Design consideration and performance of an n-p-n structure 484 × 384 element color MOS imager , 1980, IEEE Transactions on Electron Devices.

[4]  S. Shimada,et al.  MOS area sensor: Part II—Low-noise MOS area sensor with antiblooming photodiodes , 1980, IEEE Transactions on Electron Devices.

[5]  K. Takahashi,et al.  Vertical smear noise model for MOS-type color imager , 1985, IEEE Transactions on Electron Devices.

[6]  T. Suzuki,et al.  Design consideration and performance of a new MOS imaging device , 1985, IEEE Transactions on Electron Devices.

[7]  Eric G. Stevens,et al.  A 1.4-million-element CCD image sensor , 1987, 1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.