Two-phase charge-coupled devices with overlapping polysilicon and aluminum gates.
暂无分享,去创建一个
The design, fabrication, operation, performance and analysis of two-phase surface channel, CCD shift registers built using a polysilicon overlapped by aluminum gate technology will be presented. The devices studied consist of previously described 64 and 128-stage shift registers with 1.2 mil center-to-center spacing and a new 500 stage device with 0.8 mil center-to-center spacing, including various channel widths of 5.0, 1.0 and 0.5 mil. Devices were fabricated on a variety of different substrates including
[1] W. Kosonocky,et al. Free charge transfer in charge-coupled devices , 1972 .
[2] Michael F. Tompsett,et al. The quantitative effects of interface states on the performance of charge-coupled devices , 1973 .
[3] Walter F. Kosonocky,et al. Drift-aiding fringing fields in charge-coupled devices , 1971 .
[4] W. Kosonocky,et al. Two-phase charge-coupled shift registers , 1972 .
[5] W. F. Kosonocky,et al. Fast-interface-state losses in charge-coupled devices. , 1972 .