论文信息 - Negative bi-exciton binding energy in (211)B InAs/GaAs piezoelectric quantum dots

Negative bi-exciton binding energy in (211)B InAs/GaAs piezoelectric quantum dots

We report on isolated dot spectroscopy of polar (211)InAs/GaAs quantum dots grown by MBE. Exciton and biexciton peaks have been identified, revealing a negative biexciton binding energy attributed to the presence of strong piezoelectric field.

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