论文信息 - Improving gate oxide integrity (GOI) of a W/WNx/dual-poly Si stacked-gate by using wet-hydrogen oxidation in 0.14-/spl mu/m CMOS devices - 字舞流文

Improving gate oxide integrity (GOI) of a W/WNx/dual-poly Si stacked-gate by using wet-hydrogen oxidation in 0.14-/spl mu/m CMOS devices

Y. Hanaoka | R. Tsuchiya | T. Uchino | T. Umezawa | K. Ohnishi | N. Yamamoto | Y. Nonaka | Y. Tanabe | N. Fukuda | S. Mitani | T. Shiba