300-GHz MOSFET model extracted by an accurate cold-bias de-embedding technique
暂无分享,去创建一个
[1] David E. Root. Measurement-Based Mathematical Active Device Modeling for High Frequency Circuit Simulation , 1999 .
[2] R. J. Havens,et al. A calibrated lumped-element de-embedding technique for on-wafer RF characterization of high-quality inductors and high-speed transistors , 2003 .
[3] N. Camilleri,et al. Extracting small-signal model parameters of silicon MOSFET transistors , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
[4] A. Caddemi,et al. Analytical Construction of Nonlinear Lookup Table Model for Advanced Microwave Transistors , 2007, 2007 8th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services.
[5] J.A. Jargon,et al. Multiline TRL revealed , 2002, 60th ARFTG Conference Digest, Fall 2002..
[6] Jianjun Xu,et al. Measurement-Based Non-Quasi-Static Large-Signal FET Model Using Artificial Neural Networks , 2006, 2006 IEEE MTT-S International Microwave Symposium Digest.