Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer.
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Guangjian Wu | J. Chu | Weida Hu | Shuo Sun | Xiangjian Meng | Jinglan Sun | Yutao Wang | Peng Wang | Jianlu Wang | Xudong Wang | Yan Chen | Hai Huang | B. Tian | Zhenchen Hong | H. Shen