Programming method of nonvolatile memory device and memory system having the same

The programming method of a nonvolatile memory device includes a step of storing loaded data in at least one first latch, storing recovering reference bit for recovering a fail bit in a particular state in a second latch, applying a program pulse on a memory cell, validating the memory cell's program at a first level, and changing the data stored in the at least one first latch into data with a pass pattern when the program validation has passed; and a step of performing a data recovery action, which includes reading the memory cell at a second level and recovering the loaded data using the read data and recovering reference bit.