Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage.
暂无分享,去创建一个
Dong-Ho Kang | Sanghun Jeon | Jaewoo Shim | Sungjoo Lee | Sungjoo Lee | S. Jeon | Jin-Hong Park | Jaewoo Shim | Jin-Hong Park | Woo-Young Choi | Hyunsuk Woo | Sungkyu Jang | Hyung-Youl Park | Jae-Woong Choi | Sungho Kim | Hyung‐Youl Park | Hyunsuk Woo | Woo-Young Choi | Jae-Woong Choi | S. Jang | Sungho Kim | D. Kang
[1] Hyunsang Hwang,et al. Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM) , 2014 .
[2] Sang‐Woo Kim,et al. Poly-4-vinylphenol and poly(melamine-co-formaldehyde)-based graphene passivation method for flexible, wearable and transparent electronics. , 2014, Nanoscale.
[3] R. Waser,et al. Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures , 2015 .
[4] Ute Zschieschang,et al. High-mobility polymer gate dielectric pentacene thin film transistors , 2002 .
[5] Masakazu Aono,et al. Mechanism for Conducting Filament Growth in Self‐Assembled Polymer Thin Films for Redox‐Based Atomic Switches , 2016, Advanced materials.
[6] T. Gu,et al. Conduction paths in Cu/amorphous-Ta2O5/Pt atomic switch: First-principles studies , 2014 .
[7] Xiaodong Chen,et al. Sericin for Resistance Switching Device with Multilevel Nonvolatile Memory , 2013, Advanced materials.
[8] H. Hwang,et al. Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications , 2009 .
[9] Masakazu Aono,et al. A Polymer‐Electrolyte‐Based Atomic Switch , 2011 .
[10] M. Kozicki,et al. Nanoscale memory elements based on solid-state electrolytes , 2005, IEEE Transactions on Nanotechnology.
[11] R. Waser,et al. Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide. , 2012, Nanoscale.
[12] M. Tanemura,et al. Fabrication of poly(methyl methacrylate)-MoS2/graphene heterostructure for memory device application , 2014 .
[13] T. Hasegawa,et al. Conductance quantization and synaptic behavior in a Ta2O5-based atomic switch , 2012, Nanotechnology.
[14] Yeong-Her Wang,et al. Resistive switching behavior in gelatin thin films for nonvolatile memory application. , 2014, ACS applied materials & interfaces.
[15] Jin-Hong Park,et al. Curing temperature- and concentration-dependent dielectric properties of cross-linked poly-4-vinylphenol (PVP) , 2013 .
[16] Rainer Waser,et al. Redox processes in silicon dioxide thin films using copper microelectrodes , 2011 .
[17] K. Terabe,et al. Quantized conductance atomic switch , 2005, Nature.
[18] K. Choi,et al. Resistive Switching in All-Printed, Flexible and Hybrid MoS2-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset , 2016, Scientific Reports.
[19] Hongwei Li,et al. The DNA strand assisted conductive filament mechanism for improved resistive switching memory , 2015 .
[20] H. Hwang,et al. Three‐Dimensional Integration of Organic Resistive Memory Devices , 2010, Advanced materials.
[21] Jang‐Sik Lee,et al. Resistive switching memory based on bioinspired natural solid polymer electrolytes. , 2015, ACS nano.
[22] Frederick T. Chen,et al. Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film , 2012 .
[23] Taku Kitade,et al. Structural development and mechanical properties of polyethylene naphthalate/polyethylene terephthalate blends during uniaxial drawing , 2001 .
[24] T. Hasegawa,et al. Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von‐Neumann Computers , 2012, Advanced materials.
[25] Bowen Zhu,et al. Configurable Resistive Switching between Memory and Threshold Characteristics for Protein‐Based Devices , 2015 .
[26] J. Ouyang,et al. Two-terminal resistive switching memory devices with a polymer film embedded with nanoparticles , 2015 .