论文信息 - Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation - 字舞流文

Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation

C. Hu | D. Kwon | S. Salahuddin | Sangwan Kim | A. Yadav | K. Chatterjee | C. Serrao | A. Tan | G. Karbasian