전도성 잉크를 이용한 그라비아 인쇄에서 망점 크기가 인쇄물의 표면 조도에 미치는 영향

R2R process has two different direction which called cross machine direction(CMD) and machine direction(MD). The distortion of the printed pattern becomes more severe following CMD than MD. It is because that the patterns along CMD are influenced more easily by tension and the pressure of roll than that along MD. One interesting fact here is that the patterns along CMD which are distorted more severely show better electrical performance. Generally, it has various directions of pattern in case of printed circuit such as thin film transistor(TFT). Also, some devices include the intersections of lines which are expected to show different performance according to the geometry of the intersection. Consequently, we need research about an intersection line for performance enhancement of more complex printed circuit. In this paper, we analyze the variation of distortion and electric performance according to pattern geometry variation to find a optimal condition for the performance of patterns.