A junction characterization for microelectronic devices quality and reliability
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[2] B. Akkal,et al. Electrical transport characteristics of Au/n-GaN Schottky diodes , 2006 .
[3] P. Mialhe,et al. Diode ideality factor for MOSFETs characterization of dose effect , 1996 .
[4] Cher Ming Tan,et al. Investigation of the effect of temperature and stress gradients on accelerated EM test for Cu narrow interconnects , 2006 .
[5] D. Vuillaume,et al. Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections , 1999 .
[6] Ronald D. Schrimpf,et al. Effects of Device Aging on Microelectronics Radiation Response and Reliability , 2006, 2006 25th International Conference on Microelectronics.
[7] M. Shur,et al. DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress , 2002 .
[8] Ş. Karataş,et al. The determination of electronic and interface state density distributions of Au/n-type GaAs Schottky barrier diodes , 2006 .
[9] peixiong zhao,et al. Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates , 1994 .
[10] Parameter extraction method for inhomogeneous MOSFETs locally damaged by hot carrier injection , 1988 .
[11] M. Meyyappan,et al. Nanotechnology: Role in emerging nanoelectronics , 2006 .
[12] Roland Habchi,et al. A faster power MOSFET device with electrical stress treatment , 2005 .
[13] Aristos Christou,et al. Failure mechanism models for electromigration , 1994 .
[14] P. Mialhe,et al. Silicon oxide defects in aging of MOS electronic devices , 1997 .
[15] G. C. Messenger,et al. Single Event Phenomena , 1997 .
[16] Charles Howard Henry,et al. The effect of surface recombination on current in AlxGa1−xAs heterojunctions , 1978 .
[17] Alessandro Paccagnella,et al. Degradation of static and dynamic behavior of CMOS inverters during constant and pulsed voltage stress , 2006, Microelectron. Reliab..
[18] J. Liou,et al. Characterization of oxide charge trapping in ultrathin N2O oxide using direct tunneling current , 2006 .
[19] R. L. Pease,et al. Dose-rate dependence of radiation-induced interface trap density in silicon bipolar transistors , 2006 .
[20] P. Mialhe,et al. DEGRADATION OF JUNCTION PARAMETERS OF AN ELECTRICALLY STRESSED NPN BIPOLAR TRANSISTOR , 2001 .
[21] peixiong zhao,et al. Physically based comparison of hot-carrier-induced and ionizing-radiation-induced degradation in BJTs , 1995 .
[23] Masao Sakuraba,et al. Characterization of hot-carrier degraded SiGe/Si-hetero-PMOSFETs , 2006 .
[24] Tomoya Omata,et al. Electromigration degradation mechanism for Pb-free flip-chip micro solder bumps , 2006, Microelectron. Reliab..
[25] F. Pelanchon,et al. Degradation of the diode ideality factor of silicon n–p junctions , 2000 .
[26] Jean-Pierre Charles,et al. A critical study of the effectiveness of the single and double exponential models for I–V characterization of solar cells , 1985 .
[27] New modelling method for forward junction I-V analysis , 2002 .
[28] P. Mialhe,et al. N-channel power MOSFET for fast neutron detection , 2002 .
[29] Recombination via radiation‐induced defects in field‐effect transistor , 1994 .
[30] Carl V. Thompson,et al. Electromigration in Cu interconnects with very different grain structures , 2001 .
[31]
A. Boudou,et al.
Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2>or=V/sub g/
[32] A. S. Oates,et al. Electromigration failure distributions of dual damascene Cu /low - k interconnects , 2006, Microelectron. Reliab..
[33] Joseph Ya-min Lee,et al. Hydrogen-induced transient effect in carbon-doped InGaP hetero-junction bipolar transistors , 2006, Microelectron. J..
[34] Xiaojun Li,et al. Electronic circuit reliability modeling , 2006, Microelectron. Reliab..
[35] C. Sah,et al. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics , 1957, Proceedings of the IRE.
[36] B. S. Doyle,et al. Examination of oxide damage during high-current stress of n-MOS transistors , 1993 .
[37] Wei Li,et al. Development of highly accelerated electromigration test , 2006, Microelectron. Reliab..
[38] Jean-Pierre Charles,et al. Use of electrical stress and isochronal annealing on power MOSFETs in order to characterize the effects of 60 Co irradiation , 2000 .
[39] Yao Zhao,et al. Effect of reverse substrate bias on ultra-thin gate oxide n-MOSFET degradation under different stress modes , 2006, Microelectron. Reliab..
[40] K. F. Galloway,et al. A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics , 1984, IEEE Transactions on Nuclear Science.
[41] M. Houssa,et al. Modelling negative bias temperature instabilities in advanced p-MOSFETs , 2005, Microelectron. Reliab..
[42] C. Basaran,et al. An Analytical Model for Thermal Stress Analysis of Multi-layered Microelectronic Packaging , 2004, 2005 Conference on High Density Microsystem Design and Packaging and Component Failure Analysis.
[43] V. Rao,et al. Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETs , 2000 .
[44] Chih-Tang Sah,et al. Study of the atomic models of three donorlike defects in silicon metal‐oxide‐semiconductor structures from their gate material and process dependencies , 1984 .