Subband separation energy dependence of intersubband relaxation time in wide quantum wells
暂无分享,去创建一个
Hou-zhi Zheng | Chengfang Li | K. Luo | Z. Lü | Zhongying Xu | Jin-fa Tian | Jizong Xu | Xiaoping Yang | T. Zhang
[1] Hou-zhi Zheng,et al. Photoluminescence Investigation of Charge Build-Up Process in the Emitter of a Double-Barrier Resonant Tunneling Structure , 1996 .
[2] Arthur C. Gossard,et al. Far‐infrared pump‐probe measurements of the intersubband lifetime in an AlGaAs/GaAs coupled‐quantum well , 1996 .
[3] Lee,et al. Influence of electron temperature and carrier concentration on electron-LO-phonon intersubband scattering in wide GaAs/AlxGa1-xAs quantum wells. , 1995, Physical review. B, Condensed matter.
[4] B. Deveaud,et al. Ultrafast dynamics of intersubband relaxation in GaAs quantum wells: hot carrier and phonon populations effects , 1994 .
[5] G. W. Smith,et al. Optical spectroscopy of inverted electron populations in double-barrier resonant-tunnelling structures , 1994 .
[6] Hou-zhi Zheng,et al. Studies on tunneling escape time of electrons from a quantum well in multilayered heterostructures , 1994 .
[7] K. Klitzing,et al. Photoluminescence spectroscopy of hot carriers in superlattices injected by resonant tunnelling , 1992 .
[8] Abram,et al. Intersubband carrier relaxation in highly excited GaAs/Ga1-xAlxAs multiple quantum wells. , 1990, Physical review. B, Condensed matter.
[9] Ryan,et al. Time-resolved Raman measurements of intersubband relaxation in GaAs quantum wells. , 1989, Physical review letters.
[10] Ferreira,et al. Evaluation of some scattering times for electrons in unbiased and biased single- and multiple-quantum-well structures. , 1989, Physical review. B, Condensed matter.
[11] Klein,et al. Time-resolved Raman scattering in GaAs quantum wells. , 1987, Physical review letters.