Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET
暂无分享,去创建一个
Yun Li | Gang Chen | Yonghong Tao | Song Bai
[1] Peter Friedrichs,et al. SiC JFET: Currently the Best Solution for an Unipolar SiC High Power Switch , 2008 .
[2] Chen Chen. 1200 V Normally-on 4H-SiC VJFET , 2011 .
[3] Li Li,et al. 5A 1300V Trenched and Implanted 4H-SiC Vertical JFET , 2012 .
[4] 앤드류 피. 릿나워,et al. Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making , 2009 .
[5] C. Scozzie,et al. A 2055-V (at 0.7 $\hbox{mA/cm}^{2}$) 24-A (at 706 $\hbox{W/cm}^{2}$) Normally On 4H-SiC JFET With 6.8- $\hbox{mm}^{2}$ Active Area and Blocking-Voltage Capability Reaching the Material Limit , 2008, IEEE Electron Device Letters.