The Fermi energies of electrons and holes and their densities in different graphene layers (GLs) in the $n$ and $p$ regions of the electrically induced $n\text{\ensuremath{-}}i\text{\ensuremath{-}}p$ junctions formed in multiple-GL structures are calculated both numerically and using a simplified analytical model. The reverse current associated with the injection of minority carriers through the $n$ and $p$ regions in the electrically induced $n\text{\ensuremath{-}}i\text{\ensuremath{-}}p$ junctions under the reverse bias is calculated as well. It is shown that in the electrically induced $n\text{\ensuremath{-}}i\text{\ensuremath{-}}p$ junctions with moderate numbers of GLs the reverse current can be substantially suppressed. Hence, multiple-GL structures with such $n\text{\ensuremath{-}}i\text{\ensuremath{-}}p$ junctions can be used in different electron and optoelectronic devices.