论文信息 - Reliability issues of ultra-thick gate oxides

Reliability issues of ultra-thick gate oxides

In this work, degradation and breakdown characteristics of ultra-thick gate oxides (Tox: 50 nm-120 nm) used in power MOS devices is investigated. Measurements indicate, that the established thin-oxide models for lifetime extrapolations from accelerated tests may not be appropriate for ultra-thick oxides and lead to erroneous results.

M. Kerber | U. Schwalke | T. Sekinger | M. Polzl

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