Development of Novel Thin Film Solar Cells: Design and Numerical Optimisation

The development of cost-effective solar cells requires on the one hand to master the elaboration techniques, and on the other hand, an adequate design to optimise the photovoltaic efficiency. These two research topics are closely linked and their association in the research work is the key in the development of novel thin film solar cells. The design associated with numerical optimisation gives the set of optimal physical and geometrical parameters, taking into account the technological feasibility. This will allow elaboration to target the most efficient structures in order to speed up the final device realisation. In this work, we used a new approach, based on rigorous multivariate mathematical global Bayesian algorithm, to optimise a Schottky based solar cell (SBSC) using InGaN as the absorber. The obtained photovoltaic efficiency is close to the conventional structures efficiency while being less complex to elaborate. In addition, the results have shown that the optimised SBSC structure exhibits high fabrication tolerances.

[1]  N. Fressengeas,et al.  SLALOM: Open-source, portable, and easy-to-use solar cell optimizer. Application to the design of InGaN solar cells , 2018 .

[2]  Marco Locatelli,et al.  Bayesian Algorithms for One-Dimensional Global Optimization , 1997, J. Glob. Optim..

[3]  Wladek Walukiewicz,et al.  Finite element simulations of compositionally graded InGaN solar cells , 2010 .

[4]  Aleksandra B. Djurišić,et al.  Modeling the optical constants of hexagonal GaN, InN, and AlN , 1999 .

[5]  K. Sugita,et al.  Metal-organic vapor-phase epitaxial growth of InGaN and InAlN for multi-junction tandem solar cells , 2013, Materials for Renewable and Sustainable Energy.

[6]  W. Doolittle,et al.  Guidelines and limitations for the design of high-efficiency InGaN single-junction solar cells , 2014 .

[7]  Jinmin Li,et al.  Simulation of In0.65Ga0.35 N single-junction solar cell , 2007 .

[8]  N. Fressengeas,et al.  Numerical Simulation of InGaN Schottky Solar Cell , 2016, 1601.05951.

[9]  A. Ghazai,et al.  Structural and Optical Properties of In0.27Ga0.73N/Si (111) Film Grown Using PA-MBE Technique , 2012 .

[10]  Chih-Ming Lai,et al.  Theoretical simulations of the effects of the indium content, thickness, and defect density of the i-layer on the performance of p-i-n InGaN single homojunction solar cells , 2010 .

[11]  Frank Schwierz,et al.  An electron mobility model for wurtzite GaN , 2005 .

[12]  M. Green,et al.  Solar cell efficiency tables (version 54) , 2019, Progress in Photovoltaics: Research and Applications.