A new fault protection circuit of 600V PT-IGBT for the improved avalanche energy employing the floating p-well

A fault protection circuit, which detects over-voltage under short circuit fault, of IGBT for the improved undamped inductive switching (UIS) capability using floating p-well is proposed and fabricated. Experimental results show that the proposed circuit successfully exhibits the reduction of collector current under fault condition when the protection circuit detects the fault signal and immediately lowers gate voltage. We have also verified the operation of the proposed circuit and device by employing the measurement under hard switching fault (HSF) and fault under load (FUL) conditions and two-dimensional mixed-mode simulation.

[1]  Min-Koo Han,et al.  A new 600V PT-IGBT for the improved avalanche energy by employing the floating p-well , 2003, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..

[2]  Gary M. Dolny,et al.  Optimizing 600 V punchthrough IGBT's for unclamped inductive switching (UIS) , 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

[3]  Joseph A. Yedinak,et al.  Enhanced IGBT self clamped inductive switching (SCIS) capability through vertical doping profile and cell optimization , 2002, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.

[4]  Bimal K. Bose,et al.  Investigation of fault modes of voltage-fed inverter system for induction motor drive , 1992, Conference Record of the 1992 IEEE Industry Applications Society Annual Meeting.

[5]  G. Belverde,et al.  A new gate circuit performing fault protections of IGBTs during short circuit transients , 2002, Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344).