The growth of hexagonal GaN-on-Si(100) using pulsed laser deposition
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[1] Fengyi Jiang,et al. Stability of Al/Ti/Au contacts to N-polar n-GaN of GaN based vertical light emitting diode on silicon substrate , 2011 .
[2] Ray-Hua Horng,et al. High thermal stability of high indium content InGaN films grown by pulsed laser deposition. , 2012, Optics express.
[3] Takashi Jimbo,et al. InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition , 2002 .
[4] Ray-Hua Horng,et al. GaN light emitting diodes with wing-type imbedded contacts. , 2013, Optics express.
[5] Manuela Vieira,et al. Optical properties and transport in PLD-GaN , 2003 .
[6] Ray-Hua Horng,et al. High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target. , 2012, Optics express.
[7] Liang-Wen Wu,et al. An 83% enhancement in the external quantum efficiency of ultraviolet flip-chip light-emitting diodes with the incorporation of a self-textured oxide mask , 2013, IEEE Electron Device Letters.
[8] Ray-Hua Horng,et al. Surface Modification on Wet-Etched Patterned Sapphire Substrates Using Plasma Treatments for Improved GaN Crystal Quality and LED Performance , 2011 .
[9] Fengyi Jiang,et al. Growth and characterization of InGaN blue LED structure on Si(1 1 1) by MOCVD , 2005 .