Characterization of diamond films by thermogravimetric analysis and infrared spectroscopy

Abstract Diamond films were grown on Si wafers at about 3 μm/hr by microwave plasma assisted chemical vapor deposition. The infrared transmission of a 3-μm thick film varied from near 61% at 5000 cm −1 to near 75% at 1000 cm −1 . Thermogravimetric analysis indicated that the diamond films oxidize in air at about 650°C and are less resistant to oxidation than graphite. A film containing nitrogen was grown by adding N 2 to the feed gas.

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