Impact of grounding the bottom oxide protection layer on the short-circuit ruggedness of 4H-SiC trench MOSFETs
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Yutaka Fukui | Nobuo Fujiwara | Masayuki Imaizumi | Satoshi Yamakawa | Yasuhiro Kagawa | Katsutoshi Sugawara | Rina Tanaka | Naruhisa Miura | N. Fujiwara | S. Yamakawa | M. Imaizumi | N. Miura | Y. Kagawa | Yutaka Fukui | Katsutoshi Sugawara | Rina Tanaka
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[3] Shuhei Nakata,et al. 4H-SiC Trench MOSFET with Bottom Oxide Protection , 2014 .