Combined action of an electron flux and space factors on the degradation rate and reduction of silicon solar cell parameters

We have found experimentally that illumination and passage of a forward current through a silicon p-n-junction during electron irradiation and thermal annealing attenuate the degradation rate and accelerate the reduction of solar cell photoelectric parameters. It is shown that in the usual isochronous annealing in the passive state of the sample the parameters starts to be reduced at 180 °C and on the photo- and electrothermal annealing, at 150 °C. That is, the space factors decrease the temperature of the beginning of the reduction of the irradiated sample parameters.