High Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector

A mid-wave infrared (MWIR) frequency comb is expected to dramatically improve the precision and sensitivity of molecular spectroscopy. For high resolution applications, a high speed MWIR photodetector is one of the key components, however, commercially available high speed MWIR photodetectors only have sub-GHz bandwidth currently. In this paper, we demonstrate, for the first time to our knowledge, a high speed mid-wave infrared (MWIR) uni-traveling carrier photodetector based on InAs/GaSb type-II superlattice (T2SL) at room temperature. The device exhibits a cutoff wavelength of <inline-formula> <tex-math notation="LaTeX">$5.6~\mu \text{m}$ </tex-math></inline-formula> and a 3dB bandwidth of 6.58 GHz for a <inline-formula> <tex-math notation="LaTeX">$20~\mu \text{m}$ </tex-math></inline-formula> diameter device at 300 K. These promising results show that the device has potential to be utilized in high speed applications such as frequency comb spectroscopy, free space communication and others. The limitations on the high frequency performance of the photodetectors are also discussed.

[1]  I. Vurgaftman,et al.  Mid-infrared dual-comb spectroscopy with room-temperature bi-functional interband cascade lasers and detectors , 2020 .

[2]  K. Vahala,et al.  Interleaved difference-frequency generation for microcomb spectral densification in the mid-infrared , 2020, Optica.

[3]  Tatsuo Dougakiuchi,et al.  High-speed quantum cascade detector with frequency response of over 20 GHz , 2019, Other Conferences.

[4]  Yaojia Chen,et al.  High-Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaAsSb Type-II Superlattice , 2019, Journal of Lightwave Technology.

[5]  Zhuo Deng,et al.  High-speed uni-traveling carrier photodiode for 2  μm wavelength application , 2019, Optica.

[6]  University of Leeds,et al.  Mixing Properties of Room Temperature Patch‐Antenna Receivers in a Mid‐Infrared (λ ≈ 9 µm) Heterodyne System , 2019, Laser & Photonics Reviews.

[7]  Yaojia Chen,et al.  InGaAsP/InP Uni-Traveling-Carrier Photodiode at 1064-nm Wavelength , 2019, IEEE Photonics Technology Letters.

[8]  M. Beck,et al.  Mid-Infrared Frequency Comb from a Ring Quantum Cascade Laser , 2019, 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).

[9]  A. Bainbridge,et al.  Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared , 2019, Applied Physics Letters.

[10]  Andreas Beling,et al.  High-Speed Photodetectors for Microwave Photonics , 2019, Applied Sciences.

[11]  John Bowers,et al.  Vernier spectrometer using counterpropagating soliton microcombs , 2018, Science.

[12]  Qi Jie Wang,et al.  Room-Temperature, Wide-Band, Quantum Well Infrared Photodetector for Microwave Optical Links at 4.9 μm Wavelength , 2018, ACS Photonics.

[13]  Mattias Beck,et al.  Room-temperature nine-µm-wavelength photodetectors and GHz-frequency heterodyne receivers , 2018, Nature.

[14]  Baile Chen.  Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers , 2017, IEEE Transactions on Electron Devices.

[15]  Hao Ye,et al.  High-frequency operation of a mid-infrared interband cascade system at room temperature , 2016 .

[16]  S. Diddams,et al.  Mid-infrared optical frequency combs based on difference frequency generation for molecular spectroscopy. , 2015, Optics express.

[17]  Jianxin Chen,et al.  Studies on InAs/GaSb superlattice structural properties by high resolution x-ray diffraction , 2012 .

[18]  A. Schliesser,et al.  Mid-infrared frequency combs , 2012, Nature Photonics.

[19]  A. Holmes,et al.  Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes , 2011, 2011 Numerical Simulation of Optoelectronic Devices.

[20]  J. Campbell,et al.  High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer , 2010, IEEE Journal of Quantum Electronics.

[21]  Otakar Wilfert,et al.  An Introduction to Free-space Optical Communications , 2010 .

[22]  T. Ishibashi,et al.  High‐power RF photodiodes and their applications , 2009 .

[23]  Antoni Rogalski,et al.  HgCdTe infrared detector material: history, status and outlook , 2005 .

[24]  E. Ozbay,et al.  High-speed InSb photodetectors on GaAs for mid-IR applications , 2004, IEEE Journal of Selected Topics in Quantum Electronics.

[25]  H. Ito,et al.  High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes , 2004, IEEE Journal of Selected Topics in Quantum Electronics.

[26]  A. Rogalski.  Toward third generation HgCdTe infrared detectors , 2004 .

[27]  S. Arnon,et al.  Performance of an optical wireless communication system as a function of wavelength , 2002, The 22nd Convention on Electrical and Electronics Engineers in Israel, 2002..

[28]  Hiroshi Ito,et al.  InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth , 2000 .

[29]  Hiroshi Ito,et al.  InP/InGaAs Uni-Traveling-Carrier Photodiodes , 2000 .