Improved breakdown model for estimating dark count rate in avalanche photodiodes with InP and InAlAs multiplication layers

We present an improved method for estimating the dark count rate of single-photon-sensitive avalanche photodiodes (SPADs) with either InP or InAlAs multiplication layers. Our simulation of junction breakdown probability can easily accommodate arbitrary electric field profiles and APD bias conditions. In combination with local models of dark carrier generation, our technique can provide more realistic estimates of dark count rate than are obtained by multiplying the primary dark current by a single junction breakdown probability, or by assuming constant electric fields in the multiplication layer. Our method can assist in the design of SPADs for demanding laser radar applications.

[1]  Bahaa E. A. Saleh,et al.  Dead-space-based theory correctly predicts excess noise factor for thin GaAs and AlGaAs avalanche photodiodes , 2000 .

[2]  M. H. Francombe,et al.  Resonant tunneling times in superlattice structures , 1996 .

[3]  D. G. Fouche,et al.  Detection and false-alarm probabilities for laser radars that use Geiger-mode detectors. , 2003, Applied optics.

[4]  John P. R. David,et al.  Avalanche breakdown in AlxGa1−xAs alloys and Al0.3Ga0.7As/GaAs multilayers , 1995 .

[5]  安達 定雄,et al.  Optical constants of crystalline and amorphous semiconductors : numerical data and graphical information , 1999 .

[6]  Bahaa E. A. Saleh,et al.  Breakdown probabilities for thin heterostructure avalanche photodiodes , 2003 .

[7]  J.C. Campbell,et al.  Detection efficiencies and generalized breakdown probabilities for nanosecond-gated near infrared single-photon avalanche photodiodes , 2006, IEEE Journal of Quantum Electronics.

[8]  D. Bethune,et al.  Origin of dark counts in In0.53Ga0.47As∕In0.52Al0.48As avalanche photodiodes operated in Geiger mode , 2005 .

[9]  R. Haitz.  Mechanisms Contributing to the Noise Pulse Rate of Avalanche Diodes , 1965 .

[10]  E. Li,et al.  Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures , 2000 .

[11]  William P. Risk,et al.  Dark count probability and quantum efficiency of avalanche photodiodes for single-photon detection , 2003 .

[12]  Joachim Piprek,et al.  Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation , 2003 .

[13]  Bahaa E. A. Saleh,et al.  Breakdown voltage in thin III–V avalanche photodiodes , 2001 .