Intraband emission at λ≈1.48μm from GaN∕AlN quantum dots at room temperature

We report on the intraband emission at room temperature from GaN∕AlN quantum dots grown by plasma-assisted molecular-beam epitaxy. The dots exhibit TM-polarized absorption ascribed to the intraband transition from the s to the pz shells. The pz-s intraband luminescence is observed at λ=1.48μm under optical excitation at λ=1.34μm perpendicular to the [0001] growth axis. The population of the pz state arises from Raman scattering by GaN A1 longitudinal optical phonons. Based on the emission spectral shape, we estimate that the homogeneous linewidth of the s-pz intraband transition is less than 4meV.

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