Comparative study of electrical instabilities in InGaZnO thin film transistors with gate dielectrics

Abstract A comparative study of electrical instabilities in InGaZnO thin film transistor with different gate dielectrics (Si 3 N 4 /SiO 2 , Al 2 O 3 /SiO 2 , SiO 2 /Al 2 O 3 /SiO 2 , SiO 2 ) has been investigated experimentally under the gate bias stresses combined with temperature and light illumination. The Si 3 N 4 /SiO 2 devices show the best electrical performances before stress and also the best reliability under all stress conditions. For all test devices, the device instability is the most significant under a negative gate bias stress combined with temperature and light illumination.

[1]  Jang-Yeon Kwon,et al.  Highly Stable Double-Gate Ga–In–Zn–O Thin-Film Transistor , 2010, IEEE Electron Device Letters.

[2]  Jang-Yeon Kwon,et al.  The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor , 2010 .

[3]  Po-Lun Chen,et al.  Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress , 2010 .

[4]  John F. Muth,et al.  Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors , 2008 .

[5]  Jong-Ho Lee,et al.  Comparative Study of Electrical Instabilities in Top-Gate InGaZnO thin Film Transistors with Al2O3 and Al2O3/SiNx Gate Dielectrics , 2009 .

[6]  Chi-Sun Hwang,et al.  Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics , 2010, IEEE Electron Device Letters.

[7]  A. Chin,et al.  High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate Dielectric , 2009, IEEE Electron Device Letters.

[8]  Jin Jang,et al.  Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors , 2011 .

[9]  B. Ryu,et al.  O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors , 2010, 1006.4913.

[10]  Hyuck-In Kwon,et al.  Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors , 2008 .