PHINES: a novel low power program/erase, small pitch, 2-bit per cell flash memory

A novel flash memory cell named PHINES (Programming by hot Hole Injection Nitride Electron Storage) is proposed. PHINES uses a nitride trapping storage cell structure, and channel FN erase is performed to raise Vt while programming is done by lowering local Vt through band-to-band hot hole injection. Two physical bits storage, low power P/E, high endurance, good retention and high scaling capability are achieved.