Epitaxial growth of CrSi2 on (111)Si

Epitaxial CrSi2 has been successfully grown on (111)Si. Substrate heating at 300 or 400 °C during Cr deposition was found to be more effective than two‐step annealing in promoting the growth and improving the quality of epitaxial CrSi2. The best epitaxy was obtained when sample substrates were heated at 300 or 400 °C followed by 1000–1100 °C annealing for 1 h. The orientation relationships were found to be (0001) CrSi2//(111)Si, (2240)CrSi2//(224)Si, (2020)CrSi2//(202)Si, and [1213]CrSi2//[101]Si. Dislocations present in the regular interfacial dislocation network were found to be of edge or 60° type with (1)/(6) Burgers vectors. The average dislocation spacings were measured to be 270–320 A. The discrepancy of the measured and theoretically expected value of dislocation spacing was attributed to the difference in the thermal expansion coefficients of CrSi2 and Si.

[1]  R. Pretorius,et al.  Solid state interaction between thin chromium films and silicon—a comparison between amorphous and single-crystal silicon , 1983 .

[2]  Lun-Lun Chen,et al.  Effects of two-step annealing on the epitaxial growth of CoSi2 on silicon , 1983 .

[3]  C. Palmstrøm,et al.  Phase separation in interactions of tantalum–chromium alloy on Si , 1983 .

[4]  K. Tu,et al.  Formation and structure of epitaxial NiSi2 and CoSi2 , 1982 .

[5]  R. Pretorius,et al.  Co2Si, CrSi2, ZrSi2 and TiSi2 formation studied by a radioactive 31Si marker technique , 1982 .

[6]  D. Hammer,et al.  Epitaxial NiSi2 formation by pulsed ion beam annealing , 1982 .

[7]  T. T. Sheng,et al.  Lattice Imaging of Silicide-Silicon Interfaces , 1982 .

[8]  E. Colgan,et al.  Phase formation in Cr‐Si thin‐film interactions , 1980 .

[9]  J. Poate,et al.  Silicon/metal silicide heterostructures grown by molecular beam epitaxy , 1980 .

[10]  H. Ishiwara,et al.  Double heteroepitaxy in the Si (111)/CoSi2/Si structure , 1980 .

[11]  G. Ottaviani,et al.  Phase separation in alloy‐Si interaction , 1980 .

[12]  D. Estève,et al.  Metallurgical and electrical properties of chromium silicon interfaces , 1980 .

[13]  M. Nicolet,et al.  Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer , 1976 .

[14]  W. Buckley,et al.  Structure and electrical characteristics of epitaxial palladium silicide contacts on single crystal silicon and diffused P-N diodes , 1972 .

[15]  James W. Mayer,et al.  Growth Kinetics Observed in the Formation of Metal Silicides on Silicon , 1972 .

[16]  T. Kawamura,et al.  ORIENTED GROWTH OF THE INTERFACIAL PtSi LAYER OR BETWEEN Pt AND Si , 1967 .